
器材规格
Form W super servo scheme stereo power amplifier
Effective output (20Hz - 20kHz) 280W+280W (4ohm)
200W+200W (8ohm)
Dynamic power (1kHz) 280W+280W (8ohm)
THD (at the time of THD, 20Hz - 20kHz, and an effective output) 0.003% or less
Cross modulation distortion
(at the time of 70Hz:70kHz=4:1 and an effective output) 0.003% or less
Power Band Width (IHF-3dB, THD 0.2%) 5Hz - 100kHz
Gain 28.5dB
Frequency characteristic 1Hz-100kHz+0 -1.5 dB
S/N (an IHF-A network, an input shunt) 120dB
Input sensitivity/impedance 1.5V/47kohm
Speaker load impedance 4ohm-16ohm
Dumping factor (8 ohms, 1kHz) 200
Output-terminal Speaker System-1, System2, Headphone
Transient killer operating time Power on/off:5sec/100msec
Range change x1 (0dB=200W)
x0.1 (0dB=20W)
Indicating range - 40dB--4dB
Indication precision 0±1dB-10±2dB-20±3dB
Speed of response (-infinity->0dB) 100microsec
Carriage-return velocity (0dB->-20dB) 1sec
The semiconductor used Transistor: 82 pieces
FET: Four pieces
IC: Seven pieces
Diode: 86 pieces
Supply voltage AC100V, 50Hz/60Hz
AC output Power switchpoint un-interlocking, 600W maxima
Power consumption (Electrical Appliance and Material Control Law) 320W
Dimensions Width 480x height 191x depth of 439mm
Weight 31kg
Effective output (20Hz - 20kHz) 280W+280W (4ohm)
200W+200W (8ohm)
Dynamic power (1kHz) 280W+280W (8ohm)
THD (at the time of THD, 20Hz - 20kHz, and an effective output) 0.003% or less
Cross modulation distortion
(at the time of 70Hz:70kHz=4:1 and an effective output) 0.003% or less
Power Band Width (IHF-3dB, THD 0.2%) 5Hz - 100kHz
Gain 28.5dB
Frequency characteristic 1Hz-100kHz+0 -1.5 dB
S/N (an IHF-A network, an input shunt) 120dB
Input sensitivity/impedance 1.5V/47kohm
Speaker load impedance 4ohm-16ohm
Dumping factor (8 ohms, 1kHz) 200
Output-terminal Speaker System-1, System2, Headphone
Transient killer operating time Power on/off:5sec/100msec
Range change x1 (0dB=200W)
x0.1 (0dB=20W)
Indicating range - 40dB--4dB
Indication precision 0±1dB-10±2dB-20±3dB
Speed of response (-infinity->0dB) 100microsec
Carriage-return velocity (0dB->-20dB) 1sec
The semiconductor used Transistor: 82 pieces
FET: Four pieces
IC: Seven pieces
Diode: 86 pieces
Supply voltage AC100V, 50Hz/60Hz
AC output Power switchpoint un-interlocking, 600W maxima
Power consumption (Electrical Appliance and Material Control Law) 320W
Dimensions Width 480x height 191x depth of 439mm
Weight 31kg
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